期刊
IBM JOURNAL OF RESEARCH AND DEVELOPMENT
卷 50, 期 4-5, 页码 387-410出版社
IBM CORP
DOI: 10.1147/rd.504.0387
关键词
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The paper reviews our recent progress and current challenges in implementing advanced gate stacks composed of high-kappa dielectric materials and metal gates in mainstream Si CMOS technology. In particular, we address stacks of doped polySi gate electrodes on ultrathin layers of high-kappa dielectrics, dual-workfunction metal-gate technology, and fully silicided gates. Materials and device characterization, processing, and integration issues are discussed.
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