期刊
SOLID-STATE ELECTRONICS
卷 50, 期 7-8, 页码 1368-1370出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2006.06.018
关键词
silicon carbide; junction diode; carrier lifetime
The hole lifetime tau(p) in the n-base and isothermal (pulse) current-voltage characteristics have been measured in 4H-SiC diodes with a 10 kV blocking voltage (100 mu m base width). The tau(p) value found from open circuit voltage decay (OCVD) measurements is 3.7 mu s at room temperature. To the best of the authors' knowledge, the above value of tau(p) is the highest reported for 4H-SiC. The forward voltage drops V-F are 3.44 V at current density j = 100 A/cm(2) and 5.45 V at j = 1000 A/cm(2). A very deep modulation of the blocking base by injected non-equilibrium carriers has been demonstrated. Calculations in term of a simple semi-analytical model describe well the experimental results obtained. (c) 2006 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据