期刊
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS
卷 26, 期 5-7, 页码 871-875出版社
ELSEVIER
DOI: 10.1016/j.msec.2005.09.030
关键词
defects; quantum dots; DLTS; SIMS
Self-organised InAs/GaAs quantum dots (QDs) were formed by molecular beam epitaxy using the Stranski-Krastanov growth mode. Deep-level transient spectroscopy as well as secondary ion mass spectrometry have been used to characterise structures containing the QDs. DLTS depth profiling procedures indicate that deep level-related defects are localised in GaAs in the vicinity of the QD plane. For the first time, we report the presence of a deep level-related trap with an extremely high thermal activation energy of E-c - 1.03 eV. An electron trap at E-c - 0.78 eV can be identified as the well-known level related to the EL2 family. We conclude that a third trap revealed at E-c -0.57 eV is the familiar PL killer related to the intrinsic point defect-oxygen complex. The latter is confirmed by results of the SIMS study, which indicates that the amount of oxygen accumulated at the InAs/GaAs heterointerface is increased. This paper demonstrates that the EL2 and oxygen-related deep-level centers occur by the presence of InAs/GaAs QDs. We present the hypothesis that deep states could be a factor limiting the efficiency of QD-based devices. (c) 2005 Elsevier B.V. All rights reserved.
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