Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures

The dependence of two-dimensional electron gas (2DEG) density and distribution in an AlxGa1-xN/AlN/GaN heterostructure on the thicknesses of the AlxGa1-xN barrier layer and the AlN interfacial layer are investigated theoretically. A competitive contribution of the AlGaN and AlN layers to the 2DEG density is revealed. For an AlN interfacial layer thinner than a critical value d(cAlN), the 2DEG density is dominated by the AlGaN barrier and the 2DEG density increases with the increase of the AlGaN barrier thickness, as in the case of a simple AlGaN/GaN heterostructure. While the AlN interfacial layer will take the dominant contribution to the 2DEG density as its thickness exceeds d(cAlN). In this case, the increase of AlGaN barrier layer thickness leads to the decrease of the 2DEG density. Detailed calculations show that the critical AlN thickness increases with the increase of Al content in the AlGaN barrier.