期刊
JOURNAL OF LUMINESCENCE
卷 119, 期 -, 页码 546-550出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jlumin.2006.01.057
关键词
diluted nitrides; molecular beam epitaxy; photoluminescence; photo-modulated reflectance
类别
We report the effect of rapid thermal annealing (RTA) on the optical properties of GaN0.01As0.99 samples grown by molecular beam epitaxy. In particular, a blueshift of the PL peak energy is observed when annealing the samples at 650-900 degrees C. Samples annealed showed pronounced enhancement in PL intensity as compared to the as-grown sample, and 850 degrees C is proposed as the optimum RTA temperature. The results are examined as a consequence of RTA-induced nitrogen diffusion inside the GaN0.01As0.99 material rather than diffusion out of the alloy, which homogenizes initial nitrogen composition fluctuations. In addition, for photo-modulated reflectance (PR) spectra of RTA samples, the fundamental band gap transition (Eo) and the transition from the spin-orbit split-off valence band (E-0 + Delta(0)) are observed. Both of the two transitions increase with increasing annealing temperature. (c) 2006 Published by Elsevier B.V.
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