Intrinsic ferromagnetism in wurtzite (Ga,Mn)N semiconductor

Intrinsic ferromagnetism in the high-quality wurtzite Ga0.937Mn0.063N semiconductor is unambiguously demonstrated by both macroscopic magnetization measurements and x-ray magnetic circular dichroism. The structural quality of the samples grown by plasma-assisted molecular beam epitaxy is confirmed by x-ray diffraction and x-ray linear dichroism. The Curie temperature of a (Ga,Mn)N sample with 6.3% Mn is approximate to 8 K with a spontaneous magnetic moment of 2.4 mu(B) per Mn at 2 K.