期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 18, 期 13-16, 页码 1735-1737出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2006.879948
关键词
In(Ga)As; modal gain; quantum dots (QDs); semiconductor laser
A semiconductor laser containing seven InAs-In-GaAs stacked quantum-dot (QD) layers was grown by molecular beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 120 mu m were fabricated and tested. A high modal gain of 41 cm(-1) was obtained at room temperature corresponding to a modal gain of similar to 6 cm(-1) per QD layer, which is very promising to enable the realization of 1.3-mu m ultrashort cavity devices such as vertical-cavity surface-emitting lasers. Ground state laser action was achieved for a 360-mu m-cavity length with as-cleaved facets. The transparency current density per QD layer and internal quantum efficiency were 13 A/cm(2) and 67%, respectively.
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