Oxygen-vacancy-related dielectric anomaly in CaCu3Ti4O12:: Post-sintering annealing studies

The influence of post-sintering annealing on the dielectric properties of CaCu3Ti4O12 was investigated in the temperature range form 200 to 400 K. A dielectric peak featuring thermally activated Debye-like behavior was observed around 340 K (100 Hz). This peak can be eliminated by annealing in oxidizing atmosphere and created by annealing in reducing atmosphere. The dielectric peak was explained in terms of the combinational contributions from the n- and p-type carriers.