期刊
ADVANCED MATERIALS
卷 18, 期 13, 页码 1721-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200600188
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The current-voltage characteristics of triethylsilylethynyl anthradithiophene (TES ADT) thin-film transistors can be improved dramatically by a simple and straightforward solvent-vapor annealing process after device fabrication. Exposing the transistors to dichloroethane vapor for 2 min induces structural rearrangement and crystallization of TES ADT (see figure and cover). This procedure results in drastic increases in on currents; the saturation mobility increases by two orders of magnitude and the current-voltage hysteresis is largely eliminated.
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