期刊
ELECTRONICS LETTERS
卷 42, 期 14, 页码 825-827出版社
INSTITUTION ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el:20061224
关键词
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A passive detection scheme for broadband, 10 GHz-2.52 THz, sensing at room temperature is demonstrated using a hemispherical silicon lens-coupled diode of an asymmetrically-shaped bow-tie geometrical form. The device is fabricated from an MBE-grown In0.54Ga0.46As wafer as mesas of 3 mu m depth produced by wet etching. The detector exhibits voltage sensitivity about 5 V/W below 1 THz.
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