期刊
JOURNAL OF NON-CRYSTALLINE SOLIDS
卷 352, 期 23-25, 页码 2332-2334出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jnoncrysol.2006.01.099
关键词
crystal growth; X-ray diffraction; chemical vapor deposition; atomic force and scanning tunneling microscopy
In this work we report on the growth and characterization of high quality MOCVD GaN film grown on Al2O3 substrates by using a HT (> 1150 degrees C)-AlN buffer layer. We have investigated the most favorable growth conditions in terms of temperature, thickness and growth rate of AlN buffer layer in order to optimize the high temperature GaN layer. The improved morphological and structural properties of GaN layer were verified by AFM and XRD measurements. The optimized GaN layer presents a smooth surface with a rms value of 1.4 angstrom. The full width at half maximum (FWHM) for 800 nm thick GaN films is 144. Furthermore PL measurements and C-V analysis confirm that in GaN layer grown on HT-AlN buffer layer defect density is drastically reduced. (c) 2006 Elsevier B.V. All rights reserved.
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