期刊
ADVANCED MATERIALS
卷 18, 期 14, 页码 1861-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200600206
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A simple and economical way of patterning pentacene (see figure) for the fabrication of organic thin-film transistors (TFTs) is described. In this transfer patterning technique a pentacene film deposited on a patterned rigiflex mold is transferred to the surface of an insulating gate dielectric. The carrier mobility of such a TFT is shown to be similar to that of a reference device fabricated using a shadow-mask technique.
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