期刊
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
卷 132, 期 1-2, 页码 215-221出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.mseb.2006.02.027
关键词
photoimageable thick films; fritless binder; electrical measurements; electron microscopy
In the present communication, we have explored the possibility of using bismuth oxide (fritless permanent binder) in place of lead borosilicate glass in our aqueous-developable photoimageable thick film conductor formulation. We have varied the weight percentage of bismuth oxide from 0% to 10% maintaining the inorganic to organic ratio. of 72:28 for formulating the pastes. We have employed physicochemical techniques such as TG/DTA, SEM/EDAX and sheet resistance measurement to arrive at optimized weight percentage of Bi2O3 yielding the desired line/space resolution, minimal line shrinkage, better adherence and expected sheet resistance. (c) 2006 Elsevier B.V. All rights reserved.
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