期刊
THIN SOLID FILMS
卷 511, 期 -, 页码 51-54出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2005.11.097
关键词
chalcopyrite; Cu(In, Ga)Se-2; CIGS; high efficiency; texture; preferred orientation; grain boundary; thin-film solar cell
Solar cells based on polycrystalline thin-film Cu(In,Ga)Se-2 materials have recently achieved a new level of performance with a certified efficiency of 19.5%. In this contribution, some physical characteristics of the absorber materials (and devices) leading to such performance are presented. From the absorber composition and the device quantum efficiency data, we found that these materials have an atomic bulk composition of 0.88 < Cu/(In+Ga)< 0.95 and Ga/(In+Ga) similar to 0.3 leading to an empirical effective band gap of 1.14 eV for which maximum performance is attained. These chalcopyrite absorber materials are also characterized by a strong < 220/204 > preferred orientation. Because of this key structural aspect found in our high-efficiency absorbers, we present a comparison for some physical characteristics of the absorber as related to typical preferred orientations observed in this material system, namely < 112 > and < 220/204 >. We find that < 220/204 >-oriented thin films are in general more homogeneous than < 112 >-oriented films in terms of their optoelectronic properties, and they lead to materials with a lower density of nonradiative recombination centers. (c) 2005 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据