Quantification of deuterium irradiation induced defect concentrations in tungsten

Tungsten has been proposed for first wall material in thermonuclear reactors, where its behaviour in the presence of hydrogen containing plasma irradiation at elevated temperatures is of key interest. Deuterium induced defects in polycrystalline tungsten have been studied. Deuterium was implanted into tungsten samples and retained D-concentrations were analyzed with nuclear reaction analysis and secondary ion mass spectrometry. We observed four different defect types that trap deuterium with release temperatures of 455, 560, 663 and 801 K. Total number of each defect type produced by 5.8 x 10(16) cm(-2) 30-keV D implantation at room temperature was obtained to be 0.260, 0.156, 0.082 and 0.056 traps cm(-2)/implanted D atom. (c) 2006 Elsevier B.V. All rights reserved.