期刊
PLASMA SOURCES SCIENCE & TECHNOLOGY
卷 15, 期 3, 页码 479-488出版社
IOP PUBLISHING LTD
DOI: 10.1088/0963-0252/15/3/025
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The aim of this paper is to determine the atomic oxygen surface loss probability on silica under microwave plasma conditions around 133 Pa ( 1 Torr). A pulsed induced fluorescence technique where a main long pulse creates the plasma and a shorter one re-excites atoms in the time post-discharge was used. The method and its validity under the present experimental conditions are discussed at large. The oxygen surface loss probability on silica is found to be around 3% under plasma conditions, while it is estimated to be two orders of magnitude lower for a surface not submitted to the plasma.
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