Solution-processed single-walled carbon nanotube transistors with high mobility and large on/off ratio

We have examined the device characteristics of solution-processed single-walled carbon nanotube (SWNT) transistors. By using an electrical breakdown, SWNT-field-effect transistors (FETs) exhibited an on/off ratio (I-on/I-off) of 10(4) and a field-effect mobility of 3.6 cm(2) V-1 S-1 in air, which are comparable to those of other organic FETs. We investigated the detailed mechanism of carrier injection from electrode metals into SWNTs. From the temperature dependence of source-drain current, we evaluated the effective Schottky barrier height for holes to be 170 meV.