Thick silicon carbide homoepitaxial layers grown by CVD techniques

The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is described for two types (horizontal and vertical) of hot-wall (HW) CVD reactors. In both cases, the advantages of HWCVD are the better cracking efficiency of the precursor gases and better temperature distribution together with low input power. Characterizations of some examples of thick SiC layers grown are given.