期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 9, 期 4-5, 页码 802-805出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2006.09.003
关键词
Sige; virtual layers; defects etching; threading dislocations
We compare four different selective etching solutions commonly used to highlight threading dislocations (TD), in SiGe hetero-epitaxial layers. The aim is to identify, amongst the many reported in the literature, an etching solution effective over the whole Ge concentration range. Etching experiments have been performed on Si1-xGex linearly graded relaxed buffer layers with a final germanium concentration x varying from x = 0.2 to 0.9. All samples have been deposited on Si(1 0 0) by low-energy plasma-enhanced chemical vapour deposition (LEPECVD). The experimental results show that a variant of the so-called Schimmel-etch is successful in revealing TD over the Ge concentration range investigated. (C) 2006 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据