期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
卷 45, 期 8A, 页码 6116-6120出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.45.6116
关键词
photonic crystal; SOA; slow light; low group velocity; GaInAsP/InP
An ultralow group velocity of light in a III-V semiconductor photonic crystal (PC) waveguide is expected to enhance the optical gain per unit length of the waveguide. We discuss the possibility of a compact semiconductor optical amplifier that utilizes a single-line-defect PC waveguide fabricated from an all semiconductor low-A slab with deep airholes. From photonic band and traveling-wave rate equation analysis, a gain of larger than 20dB is expected in a short active PC waveguide of 10 mu m length, although the waveguide mode has a large radiation loss. We experimentally demonstrate such a waveguide in the passive wavelength regime. The waveguide is fabricated into a GaInAsP/InP wafer with high-mesa input/output waveguides. We show that the observed transmission characteristics of light correspond well to the photonic band theory.
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