Orientation of graphitic planes during annealing of dip deposited amorphous carbon film: A carbon K-edge X-ray absorption near-edge study

Annealing effect of amorphous carbon thin films on Si(I 0 0) substrates is studied by normal incidence and angle dependent carbon K-edge X-ray absorption near-edge structure (XANES) spectroscopy. The angle dependence of the XANES signal shows that the graphitic basal planes are oriented perpendicular to the surface when the film is annealed at 1000 degrees C. Micro-Raman spectroscopy reveals two well-separated bands the D band at 1355 cm(-1) and G band at similar to 1600 cm(-1), and their ID/IG intensity ratio indicates the formation of more graphitic film at higher annealing temperatures. X-ray diffraction pattern of 1000 degrees C temperature annealed film confirms the formation of graphite structure. (c) 2006 Elsevier Ltd. All rights reserved.