An 8-GHz ft carbon nanotube field-effect transistor for gigahertz range applications

In this letter, the authors report on the high-frequency (RF) performance of self-assembled carbon nanotube field-effect transistors. HF device structures including a large number of singlewall carbon nanotubes; have been designed and optimized in order to establish a new state of the art. The device exhibits a current gain (vertical bar H-21 vertical bar(2)) cutoff frequency (f(t)) of 8 GHz and a maximum stable gain value of 10 dB at 1 GHz, after de-embedding the access pads. Considering such results, nanotube-based circuits with gigahertz performance are now conceivable.