期刊
IEEE TRANSACTIONS ON PLASMA SCIENCE
卷 34, 期 4, 页码 1199-1203出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPS.2006.879179
关键词
bonding configurations; boron carbonitride (BCN) film; Fourier transform infrared spectroscopy (FTIR); X-ray photoelectron spectroscopy (XPS)
In this paper, boron carbonitride films were deposited by a do reactive unbalanced magnetron sputtering of conductive B4C target in a mixture gas of nitrogen and argon. The films with various content of N were obtained by a varying N-2/Ar flow ratio in the mixed gas from 0/100 to 30/100. Structures and compositions of the films were investigated by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). The results show that the content of B, C, N, and the ratio of each element binding states depend on the ratio of N-2/Ar flow. The nitrogen content showed the rising tendency and then came to the saturation stage with an increasing N-2/Ar flow ratio. The maximal N content of 33.1 at.% was obtained when N-2/Ar flow ratio was 30/100. Nitrogen in the film is prior to binding with B forming sp(2) B-N bond, and then with C forming sp(2) C-N bond, when the N-2/Ar ratio is over a certain value during the nitrogen was introduced into a vacuum chamber. The results of the FTIR indicate that the film is a compound of B-C-N atomic hybridization.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据