High-mobility amorphous In2O3-10 wt %ZnO thin film transistors

The authors report on the fabrication and characterization of thin film transistors that use sputter deposited amorphous indium zinc oxide both for the channel and source-drain metallizations in a gate-down configuration. The channel and source-drain layers were deposited from a single In2O3-10 wt %ZnO ceramic target using dc magnetron sputtering onto an unheated substrate. The carrier densities in the channel (2.1x10(17)/cm(3)) and source/drain regions (3.3x10(20)/cm(3)) were adjusted by changing the reactive oxygen content in the sputter chamber during deposition. The resulting transistors operate as depletion mode n-channel field effect devices with saturation mobility of 20 cm(2)/V s and on/off current ratio of 10(8). (c) 2006 American Institute of Physics.