期刊
THIN SOLID FILMS
卷 513, 期 1-2, 页码 90-94出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2006.01.051
关键词
Ga-doped ZnO (GZO); pulse laser deposition (PLD); X-ray photoelectron spectroscopy (XPS); electrical properties and measurements; structure properties; optical properties
High-quality transparent conductive gallium-doped ZnO (GZO) thin films were deposited on quartz glass substrates using pulsed laser deposition. The structure and electrical and optical properties of the as-grown GZO films were mainly investigated. in X-ray diffraction, (002) and (004) peaks were detected, indicating that Ga doping did not cause structural degradation of wurtzite ZnO. The chemical state of GZO films was investigated by X-ray photoelectron spectroscopy. The GZO films formed at a substrate temperature of 300 degrees C showed a low electrical resistivity of 8.12 x 10(-5) Omega cm, a carrier concentration of 1.46 x 10(22) cm(-3) and a carrier mobility of 30.96 cm(2)/Vs at an oxygen pressure of 0.67 Pa. A visible transmittance of above 90% was obtained. (c) 2006 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据