期刊
THIN SOLID FILMS
卷 513, 期 1-2, 页码 148-151出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2006.01.066
关键词
zinc oxide; hydrogen; Fourier transform infrared spectroscopy (FTIR); photoluminescence
We investigate the hydrogen doping effect on polycrystalline ZnO thin films prepared by the photoassisted metalorganic chemical vapor deposition technique. In situ post-deposition hydrogen doping was performed using mercury-sensitized photodecomposition of hydrogen gas. From Fourier transform infrared spectra, we observe small changes in O-H bond-stretching local vibrational modes as a result of hydrogen doping. The photoluminescence measurements reveal that intentional hydrogen doping significantly suppresses nonradiative recombination centers in the ZnO films. The undoped ZnO film reveals a heavily n-type as-grown conductivity due to the high hydrogen content, but it is unstable in a humid air atmosphere. However, the electrical stability is significantly improved as a result of hydrogen doping. (c) 2006 Elsevier B.V. All rights reserved.
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