Growth of single-walled carbon nanotubes on porous silicon

Porous silicon is an important and versatile material in the semiconductor industry, and can be achieved by electrochemically etching silicon wafers. Employing porous silicon as substrates, this article presents a new approach to grow single-walled carbon nanotubes on wafers for device applications. Free from support materials, this method is a clean one. At the same time it is feasible and robust, as porous silicon is remarkably superior to polished surface in facilitating the nucleation of catalyst. The superiority of porous silicon over polished surface is attributed to their different dewetting manners. (c) 2005 Elsevier B.V. All rights reserved.