Dielectric properties of c-axis oriented Zn1-xMgxO thin films grown by multimagnetron sputtering

Zn1-xMgxO (x= 0.3) thin films have been fabricated on Pt/ TiO2 / SiO2 / Si substrates using multimagnetron sputtering technique. The films with wurtzite structure showed a (002) preferred orientation. Ferroelectricity in Zn1-xMgxO films was established from the temperature dependent dielectric constant and the polarization hysteresis loop. The temperature dependent study of dielectric constant at different frequencies exhibited a dielectric anomaly at 110 C. The resistivity versus temperature characteristics showed an anomalous increase in the vicinity of the dielectric transition temperature. The Zn1-xMgxO thin films exhibit well-defined polarization hysteresis loop, with a remanent polarization of 0.2 mu C/cm(2) and coercive field of 8 kV/cm at room temperature. (c) 2006 American Institute of Physics.