Photoelectric properties of ZnO:: In nanorods/SiO2/Si heterostructure assembled in aqueous solution

In-doped zinc oxide (ZnO:In) nanorods were grown onto SiO2/n-Si substrate without catalyst in aqueous solution. The ZnO:In nanorods/SiO2/n-Si heterostructure photovoltaic device was prepared. The structural and photoelectric properties of the as-grown ZnO:In nanorods were analyzed. ZnO:In nanorods had a strong and broad UV surface photovoltage response in the range of 300-400 nm, and the bands were identified. The photoelectric conversion properties of ZnO:In nanorods/SiO2/n-Si heterostructure were investigated. ZnO:In/SiO2/n-Si heterostructure showed a wide range photocurrent spectral response with high intensity in the UV and visible region. The rectifying behavior of this heterostructure was observed. Moreover, the device had a low turn-on voltage and a high breakdown voltage. Current-voltage characteristic was studied for the heterostructure, and the open-circuit voltage and short-circuit current were obtained.