期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 18, 期 17-20, 页码 1898-1900出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2006.881684
关键词
avalanche photodiode (APD); molecular beam epitaxy (MBE); optical receivers; photodetectors
We discuss a new simple InGaAs-InAlAs avalanche photodiode (APD) with a planar buried multiplication region. Some of the advantages compared to standard APDs are as follows: 1) The thickness of the avalanche and the charge control regions are accurately controlled by molecular beam epitaxy growth in contrast to the standard diffusion process; 2) InAlAs is the multiplication material (avalanching faster electrons) instead of InP (avalanching slower holes); 3) InAlAs avalanche gain has a lower noise figure than that for InP; 4) a guard ring is not required; 5) fabrication is as simple as that for a p-i-n detector; 6) the APD has high wafer uniformity, and high reproducibility; 7) the InAlAs breakdown voltage is lower than InP, and its variation with temperature is three times lower than that for InP; 8) excellent aging and reliability including Telcordia GR-468 qualification for die and modules; 9) high gain-bandwidth product as high as 150 GHz; and 10) high long-range (LR-2) bit-error-rate 10(-12) receiver sensitivity of -29.0 dBm at 10 Gb/s, -28.1 at 10.7Gb/s, and -27.1 dBm at 12.5 Gb/s.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据