Electrooptic properties of lead zirconate titanate films prepared on silicon substrate

The electrooptic (EO) properties of light propagated through lead zirconate titanate (PZT) films prepared on silicon (Si) substrates were successfully evaluated. Polycrystalline, {101}-oriented and {100}-oriented epitaxial PZT films with-a thickness of approximately 2pm were prepared on various types of Si substrate by chemical solution deposition. The anisotropic EO effect was observed in the polycrystalline and {101}-oriented PZT films. The in-plane and out-of-plane refractive indices of the {100}-oriented epitaxial PZT films changed with the type of substrate. The EO effect of the I 100 1 oriented epitaxial PZT film grown on a Si substrate was found to be more isotropic than those of the polycrystalline and {101}-oriented PZT films. The largest EO coefficients (r(e) = 54 pm/V and r(c) = 60 pm/V) were obtained in the {101}-oriented PZT film on the Si substrate.