Two-step behavior of initial oxidation at HfO2/Si interface

In situ x-ray photoelectron spectroscopy revealed that initial Si oxidation at the HfO2/Si(001) interface in O-2 proceeds in a two-step manner with an initial slow stage followed by a fast one. This transition in the oxidation process is most likely caused by crystallization of the HfO2 film. The first stage at 400-600 degrees C exhibited postdeposition annealing conditions suitable for suppressing the interfacial Si oxide in a monolayer region. (c) 2006 American Institute of Physics.