Tunable threshold voltage and flatband voltage in pentacene field effect transistors

Charged interface states are introduced by UV-ozone treatment of a polymer gate dielectric, parylene, prior to deposition of the organic semiconductor, pentacene, thereby modifying the organic field effect transistor (OFET) operation from enhancement to depletion mode. Quasistatic capacitance-voltage measurements and the corresponding current-voltage characteristics show that the threshold voltage V-T and flatband voltage V-FB can be shifted by over +50 V, depending on the ozone exposure time. This work demonstrates that careful control of the semiconductor-insulator interface state densities is essential to V-T and V-FB control and the fabrication of reliable OFET integrated circuits. (c) 2006 American Institute of Physics.