期刊
APPLIED SURFACE SCIENCE
卷 252, 期 22, 页码 7930-7933出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2005.09.072
关键词
nanowires; semiconductor beta-Ga2O3; microwave plasma
In this study, we demonstrate the large-scale synthesis of beta gallium oxide (beta-Ga2O3) nanowires through microwave plasma chemical vapor deposition (MPCVD) of a Ga droplet in the H2O and Ar atmosphere at 600 W. Unlike the commonly used MPCVD method, the H2O, not mixture of gas, was employed to synthesize the nanowires. The ultra-long beta-Ga2O3 nanowires with diameters of about 20-30 nm were several tens of micrometers long. The morphology and structure of products were analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM) and high-resolution transmission electron microscope (HRTEM). The growth of beta-Ga2O3 nanowires was controlled by vapor-solid (VS) crystal growth mechanism. (c) 2005 Elsevier B.V. All rights reserved.
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