期刊
VACUUM
卷 81, 期 2, 页码 155-159出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2006.03.018
关键词
ion sputtering; self-organization; pattern formation
The evolution of the surface topography during low-energy Ar+ ion beam erosion of silicon surfaces is studied. Depending on ion-beam parameters, a variety of nanostructured patterns with a very narrow size distribution can be developed on the surface. By rotating the sample, ordered nanodots are formed for ion energies >= 300 eV at normal and oblique ion incidence angles with respect to the surface normal. Dots evolving at oblique ion incidence of 75 degrees show a very high degree of ordering with a mean dot size gimel similar to 30 nm. Without sample rotation at near normal ion incidence angle (similar to 15 degrees), remarkably ordered ripple structures develop with a wavelength gimel similar to 45 nm. The degree of ordering and size homogeneity of these nanostructures increases with erosion time eventually leading to the most ordered self-organized patterns on Si surfaces reported so far. (c) 2006 Elsevier Ltd. All rights reserved.
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