Low temperature metallic state induced by electrostatic carrier doping of SrTiO3

Transport properties of SrTiO3-channel field-effect transistors with parylene organic gate insulator have been investigated. By applying gate voltage, the sheet resistance falls below R-square similar to 10 k Omega at low temperatures, with carrier mobility exceeding 1000 cm(2)/V s. The temperature dependence of the sheet resistance taken under constant gate voltage exhibits metallic behavior (dR/dT > 0). Results demonstrate an insulator to metal transition in SrTiO3 driven by electrostatic carrier density control. (c) 2006 American Institute of Physics.