期刊
SCIENCE
卷 313, 期 5795, 页码 1942-1945出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1131091
关键词
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We report on a large electric-field response of quasi-two-dimensional electron gases generated at interfaces in epitaxial heterostructures grown from insulating oxides. These device structures are characterized by doping layers that are spatially separated from high-mobility quasi-two-dimensional electron gases and therefore present an oxide analog to semiconducting high - electron mobility transistors. By applying a gate voltage, the conductivity of the electron gases can be modulated through a quantum phase transition from an insulating to a metallic state.
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