期刊
APPLIED SURFACE SCIENCE
卷 252, 期 23, 页码 8131-8134出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2005.10.031
关键词
cathodoluminescence; nitrogen binding; photoelectron spectroscopy
ZnO film with (1 0 0) orientation was produced on silicon substrate and doped with nitrogen using plasma immersion ion implantation. The effects due to N doping were investigated using cathodoluminescence (CL). In the heavily nitrogen-doped ZnO film, the intensity of ultraviolet (UV) band decreases and that of the visible band increases as a function of the electron bombardment cycle i.e. time. Based on the X-ray photoelectron spectroscopy (XPS) analysis, the unstable Zn-N bond is responsible for the CL behavior and the experimental results agree well with the first-principle calculation. Our work is helpful to our understanding of the role of p-type dopants in ZnO. (c) 2005 Elsevier B.V. All rights reserved.
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