期刊
SURFACE SCIENCE
卷 600, 期 19, 页码 L255-L259出版社
ELSEVIER
DOI: 10.1016/j.susc.2006.07.024
关键词
infrared reflection-absorption spectroscopy (IRAs); high-resolution electron energy loss spectroscopy (HREELS); scanning tunneling microscopy (STM); surface structure; morphology; silicon dioxide (SiO2)
In this letter, atomically resolved scanning tunneling microscopic (STM) images obtained from monolayer SiO2/Mo(112) are presented. The results are consistent with a previously proposed structural model of isolated [SiO4] units based on vibrational features observed by high-resolution electron energy loss spectroscopy (HREELS) and infrared reflection-absorption spectroscopy (IRAS), and oxygen species identified by ultra-violet photoemission spectroscopy (UPS). These results are inconsistent with a structural model that assumes a two-dimensional (2-D) [Si-O-Si] network. These data illustrate that a metal substrate, although coated with an oxide thin layer, can be directly imaged at the atomic-scale with STM. (c) 2006 Elsevier B.V. All rights reserved.
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