期刊
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
卷 54, 期 10, 页码 3616-3622出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMTT.2006.882403
关键词
gallium nitride; high electron-mobility transistor (HEMT); multibias; small-signal model
This paper focuses on the determination and analysis of an accurate small-signal equivalent circuit for gallium-nitride high electron-mobility transistors under different bias conditions. Our experimental results show that a channel capacitance has to be added to the conventional forward cold model for modeling the device-under-test. The validity of the proposed extraction procedure has been verified by the very good agreement between simulated and measured scattering parameters up to 50 GHz.
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