期刊
RARE METALS
卷 25, 期 -, 页码 150-152出版社
NONFERROUS METALS SOC CHINA
DOI: 10.1016/S1001-0521(07)60063-1
关键词
LPCVD; SiO2; passivation; anneal
Atomic H generated by a plasma NH3 source at 400 degrees C was demonstrated to passivate dehydrogenated Si3N4/SiO2/Si stacks effectively by bonding with defects in the Si3N4 film and at the Si-SiO2 interface. A subsequent anneal in N-2 after atomic H reintroduction was demonstrated to further improve passivation of the Si-SiO2 interface. Isothermal and isochronal anneals in N-2 were carried out in order to determine the optimized annealing conditions.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据