Pseudogap in electron-doped superconducting Sm2-xCexCuO4-δ by interlayer magnetotransport

c-axis interlayer magnetoresistivity is measured for an electron-doped (n-type) superconducting cuprate Sm2-xCexCuO4-delta with x=0.14-0.16 using 30 nm thick small mesa structures. A systematic doping dependence is observed in the negative interlayer magnetoresistance (MR) component, from which the pseudogap onset temperature T-* is determined as the negative MR appearance temperature. For a doping level close to the phase boundary between superconductivity and antiferromagnetism, a T-* of 48 K is observed. It is also found that T-* decreases systematically with increasing x but is still higher than T-c. For all the doping levels, the result represents features characteristic of hole-doped (p-type) cuprates in the overdoped region, suggesting that the phase diagrams for the pseudogap are primarily similar for both the n- and p-type cuprates.