期刊
IEEE TRANSACTIONS ON MAGNETICS
卷 42, 期 10, 页码 3017-3019出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2006.878402
关键词
buffer layer; FePt; interfacial effect; MgO
buffer layer in FePt perpendicular media blocked diffusion from the CrRu underlayer and promoted epitaxial growth of the FePt L1(0) film. The MgO layer deposited at 50 degrees C appeared continuous and the interface roughness between MgO and FePt decreased with increasing thickness up to 4 nm. The predominant FePt (001) texture slightly improved with increasing MgO thickness. At 350 degrees C, deposited MgO (2-nm thickness) was discontinuous and island-like. For 8-nm-thick MgO, the FePt (001) dominated and FePt (111) almost disappeared. Defects such as grain boundaries, twin boundaries, and interface roughness contributed to the high coercivity as a result of high deposition temperature or small MgO thickness.
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