期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 21, 期 10, 页码 1408-1411出版社
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/21/10/006
关键词
-
Gate leakage currents in high performance InSb/AlInSb quantum well field effect transistors are presented. Thermionic emission theory for Schottky contacts, including the Schottky effect (image force lowering), is successfully used to explain the form of the gate leakage current as a function of gate voltage (I(V-g)) at room temperature. A value for the unlowered Schottky barrier height is extracted from this analysis (similar to 210 meV). The measurement of barrier height is seen to be in good agreement with the assertion that the Al0.15In0.85Sb material system exhibits mid-bandgap pinning at the metal-semiconductor interface. Gate current as a function of temperature is also used to extract barrier heights, using Arrhenius style plots, and they are shown to be consistent with thermionic emission over an image force lowered barrier. Low temperature I(V-g) data are also presented whereby the gate current is seen to increase below similar to 30 K. This effect is unexpected and is attributed to possible movement of the pinning level at the metal-semiconductor interface.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据