4.6 Article

RF MEMS oscillator with integrated resistive transduction

期刊

IEEE ELECTRON DEVICE LETTERS
卷 27, 期 10, 页码 805-807

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2006.882526

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CMOS integrated circuits; microelectromechanical devices; oscillators; resistance heating; resonators

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A method to integrate micromechanical frequency-determining elements along with the corresponding electromechanical transducers into a poly or single-crystal silicon film layer is demonstrated. A resistor dissipating several microwatt of power induces high-frequency resonant mechanical motion in a shallow-shell membrane. Transduction from the mechanical to the electrical domain is performed using implanted piezoresistors, which are sensitive to strain produced by resonant motion. Self-sustained oscillations at 10 MHz are demonstrated when the device is directly coupled to a high-impedance operational amplifier and a positive feedback loop. Finally, this letter discuss how the resonator and transducers may be incorporated into standard integrated-circuit technology.

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