期刊
IEEE ELECTRON DEVICE LETTERS
卷 27, 期 10, 页码 821-823出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2006.882564
关键词
fluorine; HfO2/SiO2; high-k; interface states; negative bias temperature instability (NBTI); positive charges
In this letter, we demonstrate that negative bias temperature instability of high-kappa (HfO2/SiO2) gate dielectric stacks can be greatly improved by incorporating fluorine and engineering its concentration depth profile with respect to HfO2/SiO2 interface. It was found that fluorine is easily incorporated in HfO2/SiO2 at low temperatures (<= 400 degrees C) by F-2 anneal in the presence of UV radiation. Fluorine tends to segregate at the HfO2/SiO2 interface and, to a lesser extent, diffuses into the underlying SiO2/Si interface. The HfO2/SiO2 stacks with F addition show significantly reduced (< 50 %) positive charge trapping and interface states generation compared to control samples without F.
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