Cr-doping effects to electrical properties of BiFeO3 thin films formed by chemical solution deposition

Cr-doped BiFeO3 (BFO) thin films were formed by depositing sol-gel solutions on Pt/Ti/SiO2/Si(100) structures. Cr-doping up to 6 at % was effective in suppressing leakage current in the high electric field region and in increasing the remanent polarization. In a 3 at % Cr-doped 350-nm-thick BFO film, the remanent polarization as large as 100 mu C/cm(2) and the coercive field of 260 kV/cm were observed when polarization vs electric field hysteresis loops were drawn at a frequency of 100 kHz with the maximum electric field of 750 kV/cm.