期刊
DIAMOND AND RELATED MATERIALS
卷 15, 期 10, 页码 1700-1707出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2006.02.005
关键词
single crystal growth; homoepitaxy; optical properties characterisation; impurity characterisation
类别
资金
- Engineering and Physical Sciences Research Council [EP/C00891X/1, GR/S96777/01] Funding Source: researchfish
Single-crystal homoepitaxial diamond has been grown by chemical vapour deposition using a high-density microwave plasma. It has been shown that the growth rate can be increased by factors of up to 2.5 by adding small concentrations (2 to 10 ppm) of nitrogen to the gas phase. Freestanding specimens up to 1.7 mm thick have been characterised using optical absorption, cathodoluminescence, photoluminescence and Raman spectroscopies, and by electron paramagnetic resonance. These techniques all demonstrate that the colourless type IIa material is of excellent quality with total defect concentrations not exceeding 200 ppb, and is ideally suited for optical and electronic applications. (c) 2006 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据