Room-temperature InAs/InP quantum dots laser operation based on heterogeneous 2.5 D Photonic Crystal

The authors report on the design, fabrication and operation of heterogeneous and compact 2.5 D Photonic Crystal microlaser with a single plane of InAs quantum dots as gain medium. The high quality factor photonic structures are tailored for vertical emission. The devices consist of a top two-dimensional InP Photonic Crystal Slab, a SiO2 bonding layer, and a bottom high index contrast Si/SiO2 Bragg mirror deposited on a Si wafer. Despite the fact that no more than about 5% of the quantum dots distribution effectively contribute to the modal gain, room-temperature lasing operation, around 1.5 mu m, was achieved by photopumping. A low effective threshold, on the order of 350 mu W, and a spontaneous emission factor, over 0.13, could be deduced from experiments. (c) 2006 Optical Society of America.