期刊
PHYSICAL REVIEW LETTERS
卷 97, 期 14, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.97.146601
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Single grain boundaries in CuGaSe2 have been grown epitaxially. Hall measurements indicate a barrier of 30-40 meV to majority carrier transport. Nevertheless, local surface potential measurements show the absence of space charge around the grain boundary; i.e., it is neutral. Theoretical calculations [Persson and Zunger, Phys. Rev. Lett. 91, 266401 (2003)] have predicted a neutral barrier for the present Sigma 3 grain boundary. Thus, we have experimentally shown the existence of a neutral grain-boundary barrier, however, smaller than theoretically predicted.
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